Recent advances in the organometallic vapor phase epitaxial growth of HgCdTe by the direct alloy growth process
Abstract
In the last few years, emphasis in the organometallic vapor phase epitaxy (OMVPE) of HgCdTe has been in the study of its suitability for device applications. This paper will review recent results in the growth of HgCdTe by the direct alloy growth (DAG) process and some of the latest device results. For a layer with a cutoff wavelength of 5.5 μm, the p-n junction R0A products as high as 1 × 10 6 Ω cm 2 and metal-insulator-semiconductor (MIS) charge storage times as high as 250 ms were obtained. The issue of uniformity and reproducibility of the layers will also be addressed.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- February 1992
- DOI:
- 10.1016/0022-0248(92)90706-O
- Bibcode:
- 1992JCrGr.117....1B
- Keywords:
-
- Crystal Growth;
- Mercury Cadmium Tellurides;
- Metalorganic Chemical Vapor Deposition;
- Mis (Semiconductors);
- P-N Junctions;
- Vapor Phase Epitaxy;
- Electric Charge;
- Infrared Detectors;
- Liquid Phase Epitaxy;
- Molecular Beam Epitaxy;
- Solid-State Physics