Residual hydrogen gas induced defects in heteroepitaxial Y1Ba2Cu3O7 - x films
Abstract
Heteroepitaxial Y1Ba2Cu3O7-x films were grown on MgO(100) substrates by using the reactive evaporation method. The in situ streak reflection high energy electron diffraction pattern of films gradually faded with an increasing thickness when the hydrogen partial pressure during growth was higher than 1×10-6 Torr. Transmission electron microscope observation revealed that the film showed heteroepitaxial growth in the early stage of coevaporation. However, as with the increase of film thickness, the quality of the film became worse and finally reached polycrystalline. These results are attributed to the accumulation of hydrogen induced defects during heteroepitaxial growth of Y1Ba2Cu3O7-x films.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- October 1992
- DOI:
- Bibcode:
- 1992JAP....72.3622K
- Keywords:
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- Epitaxy;
- Hydrogen;
- Superconducting Films;
- Thin Films;
- Ybco Superconductors;
- Electron Diffraction;
- Magnesium Oxides;
- Mass Spectroscopy;
- Polycrystals;
- Transmission Electron Microscopy;
- Solid-State Physics