Generation lifetime, interface state density, active defect density and oxide resistivity measurements for SOI-MOSFETs and their radiation dependence

The authors report an extremely sensitive technique for the evaluation of the intrinsic material properties of silicon-on-insulator (SOI) wafers in order to relate these to the electrical performance of the manufactured devices. This simple and novel, single measurement technique permits the assessment of the true film generation lifetime, both top and buried interface state densities, corresponding oxide resistivities, and SOI film electrically active defect density. Typical values obtained were 300 microsec, 5 x 10 exp 9/sq cm eV, 10 exp 10/sq cm eV, 3 x 10 exp 16 ohm cm, 1016 ohm cm, and 3 x 10 exp 4 active defects per sq cm, respectively. This method was then used to evaluate changes in these parameters with total dose irradiation, e.g., the film generation lifetime was degraded to 50 microsec and both interface state densities increased to 10 exp 11/sq cm eV following gate biased ARACOR irradiation to 100 Krads(Si).