A comparison of charge collection effects between GaAs MESFETs and III-V HFETs
Abstract
The ion-induced gate edge effect and excess charge collection effect present in GaAs MESFETs are not present in InP and GaAs HFETs. An SEU (single event upset) characterization study shows that these devices can provide an SEU rate which is lower than that of unhardened CMOS.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1992
- DOI:
- 10.1109/23.211347
- Bibcode:
- 1992ITNS...39.1642H
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Radiation Tolerance;
- Single Event Upsets;
- Cmos;
- Fabrication;
- Indium Phosphides;
- Electronics and Electrical Engineering