Intermodulation in heterojunction bipolar transistors
Abstract
The modeling of small-signal intermodulation distortion (IM) in heterojunction bipolar transistors (HBTs) is examined. The authors show that IM current generated in the exponential junction is partially canceled by IM current generated in the junction of capacitance, and that this phenomenon is largely responsible for the unusually good IM performance of these devices. Thus, a nonlinear model of the HBT must characterize both nonlinearities accurately. Finally, the authors propose a nonlinear HBT model suitable for IM calculations, show how to measure its parameters, and verify its accuracy experimentally.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- March 1992
- DOI:
- 10.1109/22.121719
- Bibcode:
- 1992ITMTT..40..442M
- Keywords:
-
- Bipolar Transistors;
- Heterojunction Devices;
- Intermodulation;
- Signal Distortion;
- Bias;
- Direct Current;
- Equivalent Circuits;
- Microwave Amplifiers;
- Volterra Equations;
- Electronics and Electrical Engineering