Analytical modeling and design criteria for traveling-wave FET amplifiers
Abstract
The theoretical modeling and design of a traveling-wave FET are described. The device shows the capability of wide-bandwidth performance and high gain and could be useful in power applications. The proposed analytical model considers the full mode effects of the three-coupled transmission lines and an accurate analysis of the FET model in the traveling-wave amplifier. Starting from electrode dimensions and active zone doping, such a model allows one to calculate the scattering parameters. Thus, it is possible to analyze the device as a six port network in a circuit analysis program.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- February 1992
- DOI:
- 10.1109/22.120091
- Bibcode:
- 1992ITMTT..40..202D
- Keywords:
-
- Broadband;
- Field Effect Transistors;
- Traveling Wave Amplifiers;
- Capacitance;
- Green'S Functions;
- Microstrip Transmission Lines;
- Planar Structures;
- Electronics and Electrical Engineering