Analysis of low signal level characteristics for high-sensitivity CCD charge detector
Abstract
A 2D device simulator is presently used to analyze the low signal-level characteristics of a high-sensitivity floating-surface amplifier. The 5-percent charge/voltage conversion ratio variance thus obtained from 0.5 to 4000 signal electrons implies a capacity for the production of linear, under-10-signal-electron ratios for an actual amplifier. It is also possible to improve the charge/voltage conversion ratio by a factor of 2, relative to the fabricated device.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- June 1992
- DOI:
- 10.1109/16.137327
- Bibcode:
- 1992ITED...39.1465O
- Keywords:
-
- Charge Coupled Devices;
- N-Type Semiconductors;
- Network Analysis;
- Two Dimensional Models;
- Charge Transfer Devices;
- Electrical Properties;
- Gates (Circuits);
- Electronics and Electrical Engineering