A high-performance AlGaAs/InGaAs/GaAs pseudomorphic MODFET-based monolithic optoelectronic receiver
Abstract
A monolithically integrated optoelectronic receiver based on the pseudomorphic InGaAs on GaAs material system has been fabricated and tested for the first time. Quarter-micrometer modulation-doped field-effect transistors (MODFETs) with ft's of 66 GHz are used in the two-stage transimpedance amplifier design. The circuit utilizes all active components including a metal-semiconductor-metal (MSM) photodetector and a common-gate FET active feedback resistor. Transimpedances between 300 and 3000 ohm are obtained by varying the controlling gate voltage of the feedback FET. A 3-dB transimpedance bandwidth of 5.6 GHz and a transimpedance-bandwidth product of 4.8 THz-ohm are measured for the amplifier. A maximum bandwidth of 4.4 GHz is deduced from optical pulse measurements limited mainly by the transit time of photogenerated carriers across the 3-micron finger spacing of the large 100 x 100-sq micron MSM.
- Publication:
-
IEEE Photonics Technology Letters
- Pub Date:
- January 1992
- DOI:
- 10.1109/68.124881
- Bibcode:
- 1992IPTL....4...73K
- Keywords:
-
- Integrated Circuits;
- Modfets;
- Network Synthesis;
- Optoelectronic Devices;
- Semiconductor Devices;
- Aluminum Gallium Arsenides;
- Field Effect Transistors;
- Gallium Arsenides;
- Indium Gallium Arsenides;
- Electronics and Electrical Engineering