Temperature dependence of common-emitter I-V and collector breakdown voltage characteristics in AlGaAs/GaAs and AlInAs/GaInAs HBT's grown by MBE
Abstract
The dc I-V characteristics of heterojunction bipolar transistors (HBTs) with GaAs and In(0.53)Ga(0.47)As collector regions are examined with temperature-dependent measurements. A high output conductance and a low collector breakdown voltage are noted for the In(0.53)Ga(0.47)As HBTs, whereas the opposite holds true for the GaAs collector regions. The higher collector leakage current of the HBTs with In are argued to account for the difference in behavior.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- November 1992
- DOI:
- 10.1109/55.192838
- Bibcode:
- 1992IEDL...13..557M
- Keywords:
-
- Aluminum Gallium Arsenides;
- Bipolar Transistors;
- Emitters;
- Indium Gallium Arsenides;
- Temperature Dependence;
- Volt-Ampere Characteristics;
- Carrier Density (Solid State);
- Current Density;
- Molecular Beam Epitaxy;
- N-P-N Junctions;
- Transconductance;
- Electronics and Electrical Engineering