A new technique for determining the capacitive coupling coefficients in flash EPROM's
Abstract
A new method to determine the capacitive coupling coefficients of flash EPROM's is presented. This technique relies on the Fowler-Nordheim (F-N) erase measurements and source/drain junction leakage characteristics of the device to extract the control gate, source, and drain coupling coefficients. An advantage offered by this method is its use of actual flash EPROM cell without requiring additional test structures.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- June 1992
- DOI:
- 10.1109/55.145074
- Bibcode:
- 1992IEDL...13..328S
- Keywords:
-
- Coupling Coefficients;
- Read-Only Memory Devices;
- Semiconductor Junctions;
- Electric Fields;
- Electron Tunneling;
- Electronics and Electrical Engineering