89-GHz f(T) room-temperature silicon MOSFET's
Abstract
The paper reports the implementation of deep-submicrometer Si MOSFETs that, at room temperature, have a unity-current-gain cutoff frequency (f(T)) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 A, and a channel length of 0.15 micron. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- May 1992
- DOI:
- 10.1109/55.145045
- Bibcode:
- 1992IEDL...13..256Y
- Keywords:
-
- Field Effect Transistors;
- Integrated Circuits;
- Room Temperature;
- Silicon;
- Frequency Response;
- Lithography;
- Radio Frequencies;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering