Thin-film deposition using dc reactive magnetron sputtering
Abstract
The process of deposition of AlN and Al2O3 films by the method of dc reactive magnetron sputtering was investigated experimentally and analytically. A model was developed which describes the magnetron discharge in a mixture of an inert and a reactive gas, on the basis of which a criterion was selected representing the reproducibility conditions for depositing metal-nitrogen and metal-oxygen films. A method is proposed for the control of technological parameters during the deposition process.
- Publication:
-
Fizika i Khimiia Obrabotki Materialov
- Pub Date:
- April 1992
- Bibcode:
- 1992FizKO...2...87B
- Keywords:
-
- Aluminum Nitrides;
- Aluminum Oxides;
- Magnetron Sputtering;
- Thin Films;
- Electrodeposition;
- Inorganic Coatings;
- Mechanical Engineering