35 GHz f(t) and 26 GHz f(max) GaInP/GaAs heterojunction bipolar transistors
Abstract
High gain (beta = 175) 3 x 10 sq micron GaInP/GaAs HBTs fabricated using a triple mesa etched non-selfaligned process are reported. The devices show a current gain of 46 even at a collector current of 1 microampere. Microwave measurements indicate the devices have 35 GHz f(t) and 26 GHz f(max).
- Publication:
-
Electronics Letters
- Pub Date:
- December 1992
- DOI:
- 10.1049/el:19921509
- Bibcode:
- 1992ElL....28.2341P
- Keywords:
-
- Bipolar Transistors;
- Gallium Phosphides;
- Heterojunctions;
- Indium Phosphides;
- Power Gain;
- Volt-Ampere Characteristics;
- Gallium Arsenides;
- High Gain;
- Electronics and Electrical Engineering