High frequency power AlGaAs/GaAs heterojunction bipolar transistors
Abstract
The frequency performance of a GaAlAs/GaAs heterojunction power bipolar transistor grown by molecular beam epitaxy (MBE) is presented. A maximum oscillation frequency of 32 GHz for a dissipated power of 2 W has been measured for large devices.
- Publication:
-
Electronics Letters
- Pub Date:
- July 1992
- DOI:
- 10.1049/el:19920919
- Bibcode:
- 1992ElL....28.1444C
- Keywords:
-
- Aluminum Gallium Arsenides;
- Bipolar Transistors;
- Frequency Response;
- Heterojunctions;
- High Frequencies;
- Energy Dissipation;
- Molecular Beam Epitaxy;
- Superhigh Frequencies;
- Electronics and Electrical Engineering