Novel principle of confinement in quantum-well structures
Abstract
Low threshold current and high differential gain have been reported for tensile-strained quantum well lasers. However, theoretical and experimental considerations predict that the QW heterojunction, Ga(x)In(1-x)As/Ga(0.2)In(0.8)As(0.43)P(0.57) (x is equal to or greater than 0.63) in these devices should be type II in nature. Although no electron confinement is expected, the calculations demonstrate an injection-induced electrostatic confinement of electrons. Laser operations under IIECE are expected. Such lasers are presumed to have properties very different from those of conventional QW lasers yielding new possibilities for semiconductors laser devices.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1992
- DOI:
- 10.1049/el:19920496
- Bibcode:
- 1992ElL....28..786B
- Keywords:
-
- Gallium Arsenide Lasers;
- Quantum Wells;
- Band Structure Of Solids;
- Carrier Injection;
- Indium Gallium Arsenides;
- Indium Phosphides;
- Photoelectric Emission;
- Threshold Currents;
- Lasers and Masers