Double delta-doped FETs in GaAs
Abstract
The dc and high-frequency characteristics of a vertically stacked double delta-doped FET are reported. The transconductance is shown to exhibit the expected stepped characteristic indicative of the two dopant planes being depleted in distinct and separate ranges of gate voltage. The device has a potential application to high-speed multistate logic and memory devices, with the ability to achieve a degree of vertical integration.
- Publication:
-
Electronics Letters
- Pub Date:
- February 1992
- DOI:
- 10.1049/el:19920296
- Bibcode:
- 1992ElL....28..469B
- Keywords:
-
- Doped Crystals;
- Field Effect Transistors;
- Gallium Arsenides;
- Semiconductor Devices;
- Transconductance;
- Hall Effect;
- Molecular Beam Epitaxy;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering