Monolithic integration of InAs photodiode and GaAs MESFET
Abstract
InAs pn diodes were grown in wells pre-etched in GaAs substrates. Despite the large lattice mismatch of 7.2 percent between GaAs and InAs, good photodiode characteristics were obtained with 77 K resistance area products of 70 Ohm-sq cm and a peak detectivity of 1.25 x 10 exp 11 cm sq rt Hz/W at 2.95 micron wavelength. GaAs MESFETs were fabricated next to the embedded detectors, demonstrating for the first time the feasibility of the monolithic of InAs photodiodes and GaAs electronic circuits.
- Publication:
-
Electronics Letters
- Pub Date:
- February 1992
- DOI:
- 10.1049/el:19920233
- Bibcode:
- 1992ElL....28..372D
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Indium Arsenides;
- Integrated Circuits;
- P-N Junctions;
- Photodiodes;
- Schottky Diodes;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering