Time-dependence of the interface trap build-up in deuterium-annealed oxides after irradiation
Abstract
The rate of interface trap Nit build-up after irradiation has been studied in metal-oxide semiconductor oxides which were annealed in either deuterium or hydrogen. The build-up rate is found to be substantially retarded in the deuterium-annealed oxide. This result demonstrates conclusively that the Nit build-up rate is determined by the rate of H+ (D+) drift through the oxide to the Si-SiO2 interface.
- Publication:
-
Applied Physics Letters
- Pub Date:
- December 1992
- DOI:
- Bibcode:
- 1992ApPhL..61.3014S
- Keywords:
-
- Deuterium;
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- Silicon Oxides;
- Solid-Solid Interfaces;
- Annealing;
- Hydrogen Ions;
- Metal Oxides;
- Time Dependence;
- Solid-State Physics