Growth of InAs on diamond (001) by molecular beam epitaxy
Abstract
Highly oriented InAs films have been grown on natural diamond by MBE. InAs growths were carried out on diamond and on lattice-matched III-V substrates at 250, 300, and 470 °C. The highest quality films (smoothest surface and highest degree of crystallinity) were obtained at 300 °C. X-ray diffraction data indicate that the films have a strong [111] surface normal orientation. RHEED data indicate that the InAs forms a polyvariant thin film with alignment parallel to the interface of one of the <110>InAs directions with one of the <110>diamond directions.
- Publication:
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Applied Physics Letters
- Pub Date:
- July 1992
- DOI:
- Bibcode:
- 1992ApPhL..61..405W
- Keywords:
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- Crystal Growth;
- Diamonds;
- Indium Arsenides;
- Molecular Beam Epitaxy;
- Semiconducting Films;
- Solid-Solid Interfaces;
- Surface Roughness;
- Thin Films;
- X Ray Diffraction;
- Solid-State Physics