Setback modulation doping of HgTe-CdTe multiple quantum wells
Abstract
Photoassisted molecular beam epitaxy has been used to achieve the first setback modulation doping of HgTe-CdTe heterostructures. A 43 Å setback is found to yield a factor-of-2 increase of the mobility over any measured previously for intentionally doped samples, and an 81 Å setback leads to further enhancement of the mobility.
- Publication:
-
Applied Physics Letters
- Pub Date:
- May 1992
- DOI:
- Bibcode:
- 1992ApPhL..60.2282H
- Keywords:
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- Cadmium Tellurides;
- Mercury Tellurides;
- Modulation Doping;
- Molecular Beam Epitaxy;
- Quantum Wells;
- Carrier Mobility;
- Electron Density (Concentration);
- Energy Gaps (Solid State);
- Hall Effect;
- Heterojunctions;
- Superlattices;
- Solid-State Physics