Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor deposition
Abstract
Textured diamond films have been deposited on β-SiC via microwave plasma chemical vapor deposition preceded by an in situ bias pretreatment that enhances nucleation. Approximately 50% of the initial diamond nuclei appear to be aligned with the C(001) planes parallel to the SiC(001), and C[110] directions parallel to the SiC[110] within 3°. The diamond was characterized by Raman spectroscopy and scanning electron microscopy.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 1992
- DOI:
- 10.1063/1.106541
- Bibcode:
- 1992ApPhL..60..698S
- Keywords:
-
- Crystal Growth;
- Diamonds;
- Plasma Spraying;
- Silicon Carbides;
- Thin Films;
- Vapor Deposition;
- Bias;
- Microwave Frequencies;
- Photomicrographs;
- Radio Frequency Discharge;
- Raman Spectroscopy;
- Textures;
- Solid-State Physics