Writing electronically active nanometer-scale structures with a scanning tunneling microscope
Abstract
The feasibility of producing electronically active nanometer scale structures in thin amorphous Si:H films up to 100 nm thickness by use of a Scanning Tunneling Microscope (STM) (writing cycle) was demonstrated. These structures arise from a modification of the local structural arrangement of dopant and Si atoms, induced by tunnel voltage and tunnel current. Owing to the different electronic nature, they are detected as apparent protrusions in STM images (reading cycle).
- Publication:
-
Unknown
- Pub Date:
- 1991
- Bibcode:
- 1991wean.rept.....H
- Keywords:
-
- Amorphous Semiconductors;
- Scanning Tunneling Microscopy;
- Thin Films;
- Additives;
- Feasibility Analysis;
- Film Thickness;
- P-N Junctions;
- Solid-State Physics