A cooled 1- to 2-GHz balanced HEMT amplifier
Abstract
The design details and measurement results for a cooled L-band (1 to 2 GHz) balanced high electron mobility transistor (HEMT) amplifier are presented. The amplifier uses commercially available packaged HEMT devices (Fujitsu FHR02FH). At a physical temperature of 12 K, the amplifier achieves noise temperatures between 3 and 6 K over the 1 to 2 GHz band. The associated gain is approximately 20 dB.
- Publication:
-
The Telecommunications and Data Acquisition Report
- Pub Date:
- August 1991
- Bibcode:
- 1991tdar.nasa...52O
- Keywords:
-
- Electron Mobility;
- High Electron Mobility Transistors;
- Push-Pull Amplifiers;
- Transistor Amplifiers;
- Design Analysis;
- Noise Temperature;
- Ultrahigh Frequencies;
- Communications and Radar