Gate drain geometry effect on the current voltage characteristics of GaAs MESFETs
Abstract
We investigated the effect of gate-drain distance on gallium arsenide MESFET current-voltage characteristics. DC characteristics of several GaAs MESFET's are determined and compared to results from a computer implementation of a physically based, analytical model by Chang and Day. Their model is modified to account for the effect of longer gate-drain distance, and shows excellent agreement with measured I-V curves across the full range of device geometrics tested.
- Publication:
-
Report
- Pub Date:
- June 1991
- Bibcode:
- 1991rome.reptR....S
- Keywords:
-
- Direct Current;
- Electric Potential;
- Field Effect Transistors;
- Gallium Arsenides;
- Gates (Circuits);
- Mathematical Models;
- Volt-Ampere Characteristics;
- Drainage;
- Geometry;
- Electronics and Electrical Engineering