Single event upset and charge collection imaging using ion microbeams

Single Event Upset Imaging utilizes the scanning of a micro-focused MeV ion beam across an integrated circuit to test the upset response of the circuit to energetic heavy ions. Using this technique, the position dependence of logic state upsets, as well as the charge collection efficiency of an integrated circuit, can be directly measured with micron resolution. We present in this paper a review of a series of measurements carried out on the TA670 16K static random access memory chip which displays this technique's capabilities.