Growth, characterization, and device development in monocrystalline diamond films

Externally mounted laser reflection interferometry has been incorporated into the microwave plasma growth process in order to follow the incubation period on Silicon (100) substrates and to measure the growth rate of the diamond films. Using biasing of the substrates eliminated the need for predeposition surface roughening and a much more controlled pretreatment via ion bombardment within the growth chamber. The nucleation density was varied by changing either the time of pretreatment or by varying the bias voltage. Diamond-like C films were prepared using rf sputtering of a pyrolytic graphite target. Elastic recoil experiments showed the films to contain from 23 to 33 percent H. These will be used in the future for moderate-high pressure experiments to see if the films will revert to diamond. Finally a modified Haynes-Shockley experiment was investigated as a technique for measuring the mobile charge transport character of diamond. A preliminary model has been derived and used to investigate dimensional, doping and time detection limits. Initial results are encouraging.