Semiconductor heterojunction device with graded bandgap
Abstract
The semiconductor materials of junction forming layers of a heterojunction structure are interfaced by a gap region that is graded by degree of alloying of those components of an interfacing material which are respectively compounded in the semiconductor materials of the junction forming layers having different bandgaps and band edges that are aligned by the grading of the interfacing gap region to selectively control rectifying junction characteristics.
- Publication:
-
Patent Department of the Navy
- Pub Date:
- October 1991
- Bibcode:
- 1991navy.reptU....C
- Keywords:
-
- Energy Gaps (Solid State);
- Heterojunction Devices;
- Semiconductor Devices;
- Gallium Arsenides;
- Heterojunctions;
- Patents;
- Transistors;
- Solid-State Physics