Growth of epitaxial ZnS films by pulsed-laser ablation
Abstract
Pulsed KrF (248nm) laser ablation of a polycrystalline ZnS target has been used to grow high quality, carbon-free, epitaxial ZnS thin films on GaAs(001), GaAs(111), and GaP(001). The films were grown at temperatures of 150-450 C, using a rotating substrate heater and a deposition geometry that produces films with highly uniform thickness. X-ray rocking curves are consistent with (111) stacking faults being the dominant defects in the ZnS films grown on GaAs. The estimated stacking fault density is approximately 6 x 10(exp 10) cm(exp -3), comparable to the best MOCVD ZnS films. RBS analysis shows that these defects are located predominantly near the GaAs-ZnS interface. The anisotropy of the ZnS growth rate, between the GaAs(001) and GaAs(111) surfaces, was found to be temperature-dependent.
- Publication:
-
Presented at the Annual Fall Meeting of the Materials Research Society
- Pub Date:
- November 1991
- Bibcode:
- 1991mrs..meetQ...2M
- Keywords:
-
- Crystal Defects;
- Epitaxy;
- Laser Ablation;
- Metalorganic Chemical Vapor Deposition;
- Polycrystals;
- Pulsed Lasers;
- Thin Films;
- Anisotropy;
- Gallium Arsenides;
- Temperature Dependence;
- X Ray Spectroscopy;
- Zinc Sulfides;
- Solid-State Physics