Crystalline growth of wurtzite GaN on (111) GaAs
Abstract
Gallium nitride films were grown on (111) gallium arsenide substrates using reactive RF magnetron sputtering. Despite a 20 percent lattice mismatch and different crystal structure, wurtzite GaN films grew epitaxially in basal orientation on (111) GaAs substrates. Heteroepitaxy was observed for growth temperatures between 550-600 C. X-ray diffraction patterns revealed (0002) GaN peak with a full-width-half-maximum (FWHM) as narrow as 0.17 degrees. Possible surface reconstructions to explain the epitaxial growth are presented.
- Publication:
-
Presented at the Annual Fall Meeting of the Materials Research Society
- Pub Date:
- December 1991
- Bibcode:
- 1991mrs..meet....2R
- Keywords:
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- Crystallinity;
- Epitaxy;
- Gallium Arsenides;
- Gallium Nitrides;
- Sputtering;
- Wurtzite;
- Crystal Lattices;
- Deposition;
- Substrates;
- X Ray Diffraction;
- Solid-State Physics