Characterization of semiconducting diamond film and its application to electronic devices
Abstract
A diamond p-n junction diode has been fabricated by the chemical vapor deposition technique. Diphosphorus pentaoxide and boron trioxide were used for the doping sources for the n- and p-type diamond films respectively. The films were identified as diamond from the results of the electron diffraction and Raman spectroscopy. The diode exhibted distinct rectification characteristics. The formation of the depletion layer was confirmed from the result of the electron-beam-induced current measurement.
- Publication:
-
Metallurgical Coatings and Thin Films
- Pub Date:
- 1991
- Bibcode:
- 1991meco.proc..183O
- Keywords:
-
- Diamond Films;
- Electronic Equipment;
- Hall Effect;
- P-N Junctions;
- Semiconducting Films;
- Vapor Deposition;
- Doped Crystals;
- Electron Diffraction;
- Raman Spectroscopy;
- Scanning Electron Microscopy;
- Solid-State Physics