The influence of irradiation conditions, type, and concentration of impurities on radiation defects characteristics in indium antimonide under electron irradiation
Abstract
The data on influence of electron irradiation conditions (beam intensity - 1-10 mkA, irradiation temperature - 80-400 K, electron energy - 4-14 MeV, fluence) type and concentration of impurities on defects introduction rate in InSb, which are stable at room temperature, and the data on galvanomagnetic properties of InSb with such defects are presented. The results are explained by introduction, interaction, and annealing of point defects. Mechanisms of irradiation conditions influence on defect production are analyzed.
- Publication:
-
Unknown
- Pub Date:
- 1991
- Bibcode:
- 1991iict.rept.....V
- Keywords:
-
- Annealing;
- Doped Crystals;
- Electron Energy;
- Electron Irradiation;
- Fluence;
- Galvanomagnetic Effects;
- Hall Effect;
- Impurities;
- Indium Antimonides;
- Point Defects;
- Radiation Effects;
- Temperature Effects;
- Conductors;
- Electric Potential;
- Electrical Measurement;
- Radiation Dosage;
- Single Crystals;
- Temperature Dependence;
- Solid-State Physics