The effectiveness and stability of impurity/defect interactions and their impact on minority carrier lifetime

This report covers the investigation and understanding of electrical activity of 'clean' and metallic impurity decorated defects. A heterostructure containing a controlled number of deliberately introduced misfit dislocations is used as a model system to simulate a variety of defect/impurity interactions in photovoltaic materials. In addition, a noncontact laser/microwave deep-level transient spectroscopy technique is applied to characterize the minority carrier lifetime and determine the energy levels of defects.