Double-crystal x ray diffraction studies of Si ion-implanted laser-annealed GaAs

Double-crystal x ray rocking curves and topographs have been used to study the relief of strain produced by pulsed laser annealing in 28Si+ ion-implanted GaAs. X ray rocking curves of 140 keV 2 x 10(exp 14)/sq cm as-implanted GaAs indicated that the upper 2500 angstroms of the sample had been strained to a maximum of 0.38. Rocking curves from two of a single-shot laser anneal sites with the highest energy densities (and largest areas of annealing) indicated that the ion-implantation strain had been almost completely relieved. X ray rocking curves of the 180 keV 5 x 10(exp 15)/sq cm as-implanted GaAs revealed that the surface of the sample has been strained to a depth of 6000 angstroms with a maximum strain of 0.50 percent. Rocking curves from rastered laser anneal sites indicated that considerable strain remained in the sample.