Device applications of layered structures
Abstract
The objective of this project is to explore the application of layered semiconductor structures fabricated by molecular-beam epitaxy (MBE) to the development of electronic and electro-optical devices of interest for space applications. The principal focus of this project was the development of high-performance long-wavelength infrared (LWIR) photodetectors comprising multiple quantum wells formed by alternating layers of gallium arsenide (GaAs) and aluminum gallium arsenide (AlGaAs). Previously, we successfully modeled, designed, fabricated, and characterized quantum-well infrared photodetectors (QWIPs) with high detectivities. In the just-completed year, we investigated further the physics responsible for limiting the performance of these devices, explored new structures to enhance device performance, and designed, fabricated, and characterized QWIPs with peak responsivity at wavelengths longer than 10 microns.
- Publication:
-
Aerospace Sponsored Research
- Pub Date:
- December 1991
- Bibcode:
- 1991aesr.nasa....8L
- Keywords:
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- Fabrication;
- Molecular Beam Epitaxy;
- Optoelectronic Devices;
- Photometers;
- Quantum Wells;
- Semiconductor Devices;
- Aluminum Gallium Arsenides;
- Infrared Radiation;
- Technology Utilization;
- Electronics and Electrical Engineering