CVD diamond growth with hot filament processes
Abstract
Hot-filament CVD is here used to deposit 10-micron diamond films on the surface of various substrate materials, including monocrystalline Si, polycrystalline Cu, Mo, and aluminum nitride, using CH4/H2 as the precursor gas mixture. Attention is given to the distinct growth phases observed on the (111) plane of the Mo substrate at 950 C, which yielded no dislocation spirals; this is held to imply a 2D nucleation-sustained layered growth process.
- Publication:
-
Applications of Diamond Films and Related Materials
- Pub Date:
- 1991
- Bibcode:
- 1991adfr.proc..555Y
- Keywords:
-
- Crystallites;
- Diamond Films;
- Gas Mixtures;
- Nucleation;
- Vapor Deposition;
- Aluminum Nitrides;
- Copper;
- Electron Diffraction;
- Filaments;
- Hydrogen;
- Methane;
- Molybdenum;
- Silicon;
- Substrates;
- Tungsten;
- X Ray Diffraction;
- Solid-State Physics