Novel electron devices based on the unique properties of diamond
Abstract
An account is given of the unique design principles that apply to such electron devices as metal-insulator-metal photodetectors, cascade and virtual-contact FETs, and high-electron-mobility transistors. It is noted that while diamond is a high-power, high-temperature, or extremely HF amplifier, it cannot accomplish all three functions simultaneously. Attention is given to the significance of diamond's heat-dissipation capabilities.
- Publication:
-
Applications of Diamond Films and Related Materials
- Pub Date:
- 1991
- Bibcode:
- 1991adfr.proc..287Y
- Keywords:
-
- Diamonds;
- Electrical Properties;
- Field Effect Transistors;
- High Electron Mobility Transistors;
- P-N Junctions;
- Photodiodes;
- Cmos;
- Energy Gaps (Solid State);
- Holes (Electron Deficiencies);
- Photometers;
- Snells Law;
- Electronics and Electrical Engineering