Capacitive properties of a back-biased Schottky barrier in YAG
Abstract
The capacitive properties of back-biased Schottky barriers in YAG vacuum crystals were investigated experimentally using 10x10x1.9-mm polished specimens with In-Ga amalgam contacts. It is found that the electrical conductivity of YAG single crystals is of the electron type and reaches 4.1 x 10 exp -10 ohm cm. The equilibrium donor concentration in YAG is estimated at 2 x 10 exp 17/cu cm. The parameters of the depleted field and the maximum field intensity are calculated.
- Publication:
-
Zhurnal Tekhnicheskoi Fiziki
- Pub Date:
- March 1991
- Bibcode:
- 1991ZhTFi..61..173M
- Keywords:
-
- Charge Carriers;
- Electrical Resistivity;
- Single Crystals;
- Work Functions;
- Yttrium-Aluminum Garnet;
- Capacitance-Voltage Characteristics;
- Dielectric Permeability;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering