Structure and properties of TiSi 2 films on Si, obtained by Ti and Si co-evaporation in high vacuum
Abstract
In this paper is reported an investigation of the phase formation, influence of growth parameters on structure and electrophysical properties and interface structure of thin films of TiSi 2 grown by electron beam co-evaporation in high vacuum on (111)Si. The possibility of molecular beam epitaxy of TiSi 2 on (111)Si is shown. A model of phase and interface formation is proposed.
- Publication:
-
Vacuum
- Pub Date:
- January 1991
- DOI:
- 10.1016/0042-207X(91)90130-B
- Bibcode:
- 1991Vacuu..42.1191V