Design and layout considerations for GaAs power MESFETs
Abstract
The performance and reliability of GaAs power MESFETs are controlled mainly by the gate dimensions, electrical parasitics, thermal impedance, and breakdown voltage. These factors are discussed here based on available experimental findings. The layout and design of power MESFETs are examined in terms of their most important parameters.
- Publication:
-
South African Journal of Science
- Pub Date:
- April 1991
- Bibcode:
- 1991SAJSc..87..100G
- Keywords:
-
- Design Analysis;
- Electrical Properties;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Circuits;
- Electrical Impedance;
- Inductance;
- Ion Implantation;
- Molecular Beam Epitaxy;
- Electronics and Electrical Engineering