Silicon-interstitial-oxygen-interstitial complex as a model of the 450°C oxygen thermal donor in silicon
Abstract
The complex of a divalent silicon interstitial and a pair of adjacent oxygen intersitials is proposed as the core of the 450 °C oxygen thermal donor in silicon. The proposal is supported by theoretical calculations which suggest that this complex is stable relative to a self-interstitial and two separated oxygen interstitials, and that it has a doubly occupied level close to the computed conduction-band edge. The calculated spin distribution is in qualitative agreement with the one found experimentally for the NL8 center.
- Publication:
-
Physical Review Letters
- Pub Date:
- February 1991
- DOI:
- 10.1103/PhysRevLett.66.747
- Bibcode:
- 1991PhRvL..66..747D
- Keywords:
-
- 61.70.Bv;
- 71.55.Ht;
- Other nonmetals