Buried quantum-well AlGaAs laser diodes produced by a combination of metallorganic vapor phase epitaxy and liquid phase epitaxy
Abstract
Experimental results are presented for buried AlGaAs quantum-well laser diodes in which the initial epitaxial laser structure was grown by metallorganic vapor phase epitaxy while liquid phase epitaxy was used at the burying stage. The active zone width in the buried laser diodes was 2.5 +/- 0.5 microns. It is shown that the buried quantum-well AlGaAs single-mode laser diodes produced by this method have zero astigmatism and make it possible to obtain high emission power (100 mW), which is important for certain new applications.
- Publication:
-
Pisma v Zhurnal Tekhnischeskoi Fiziki
- Pub Date:
- November 1991
- Bibcode:
- 1991PZhTF..17..100V
- Keywords:
-
- Aluminum Gallium Arsenide Lasers;
- Crystal Growth;
- Liquid Phase Epitaxy;
- Metalorganic Chemical Vapor Deposition;
- Quantum Wells;
- Gallium Arsenides;
- Volt-Ampere Characteristics;
- Lasers and Masers