High yield of multiply charged silicon ions by a pulsed sputter Penning source
Abstract
A low-duty pulsed sputter Penning source has been developed for the medical synchrotron facility (HIMAC) at NIRS. A source Si 4+ current of 0.6 emA has been stably obtained by bombarding a silicon single crystal with Ar. The yield of this source was improved by a factor of more than ten, compared with that of a dc source.
- Publication:
-
Nuclear Instruments and Methods in Physics Research A
- Pub Date:
- December 1991
- DOI:
- 10.1016/0168-9002(91)91120-K
- Bibcode:
- 1991NIMPA.310..693S