Organometallic vapor-phase epitaxial growth of Al xGa 1- xSb and Al xGa 1- xAs ySb 1- y
Abstract
This paper reports, for the first time, atmospheric pressure organometallic vapor phase epitaxial growth of Al xGa 1- xSb and Al xGa 1- xAs ySb 1- y thin films. The layers were grown on InAs and GaSb substrates at a temperature of 560°C usin trimethylaluminum, trimethylgallium, trimethylantimony, and arsine as source materials. For Al xGa 1- xSb, layers with x up to 0.85 were obtained and photoluminescence was observed for x < 0.2. The band gap is indirect for x ≥ 0.22. Al xGa 1- xAs yS 1- y layers covering nearly the entire range of Al and As compositions, even those within the miscibility gap region, were obtained. Excellent surfaces were avhieved for Al xGa 1- xAs ySb 1- y layers lattice matched to InAs substrates. A large As distribution coefficient was observed, as thermodynamically predicted. It was found that Al incorporation was increased as the As concentration in the solid increased.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- September 1991
- DOI:
- 10.1016/0022-0248(91)90078-J
- Bibcode:
- 1991JCrGr.113..441C