Experimental study of the surface tension of molten GaAs and its temperature dependence under controlled As-vapor pressure
Abstract
The surface tension λ of liquid GaAs and its temperature dependence dλ/d T are measured by the sessile drop method under conditions of a constant and precisely defined As vapor pressure in the temperature range of 1370 to 1610 K. At the melting point of GaAs the values of λ = 401 × 10 -3 N/m and dλ/d T = -0.8 × 10 -3 N/m·K were found. These data are critically discussed in relation to the existing literature data. The significance of this result with regard to the onset of unsteady thermocapillary convection in GaAs is analysed and the possibility for the growth of striation-free GaAs crystals by the floating zone technique is discussed using a value for the critical Marangoni number of 606, determined numerically by our group.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- August 1991
- DOI:
- 10.1016/0022-0248(91)90018-Z
- Bibcode:
- 1991JCrGr.113..131R