Deep level transient spectroscopy of irradiated p-type InP grown by metalorganic chemical vapor deposition
Abstract
Results are presented of a deep level transient spectroscopy study of radiation-induced defects in p-type (Zn-doped) InP grown by metalorganic chemical vapor deposition. Three major hole traps (H3, H4, and H5) and two electron traps (EA and EB) were observed. The electron trap structure in particular is significantly different from that reported in the literature for p-type InP grown by other methods. Activation energies of 0.22 eV (EA) and 0.76 eV (EB) have been measured, and capture cross sections (σ∞) of 4.4×10-15 cm2 (EA), and 1.4×10-12 cm-2 (EB) have been determined. The H5 center has a thermally activated capture cross section with an energy barrier of 0.35 eV. The measured injection annealing rate of the primary hole trap (H4) was different than previously observed.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- February 1991
- DOI:
- Bibcode:
- 1991JAP....69.1435M
- Keywords:
-
- Crystal Growth;
- Indium Phosphides;
- Organometallic Compounds;
- P-Type Semiconductors;
- Vapor Deposition;
- Activation Energy;
- Doped Crystals;
- Holes (Electron Deficiencies);
- Optoelectronic Devices;
- Radiation Tolerance;
- Solar Cells;
- Solid-State Physics