Design and performance of low-current GaAs MMIC's for L-band front-end applications
Abstract
GaAs monolithic microwave integrated circuits (MMICs) with very low current and of very small size have been developed for L-band front-end applications. The MMICs fully employ lumped LC elements with uniplanar configurations. There are two kinds of MMICs: a low-noise amplifier and a mixer. The low-noise amplifier has a noise figure of 2.5 dB and a gain of 11.5 dB. The mixer has a conversion gain of 12.5 dB small local oscillator (LO) power of -3 dBm. Total current dissipation of the two MMICs is less than 8 mA with 3-V drain bias voltages.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- February 1991
- DOI:
- 10.1109/22.102962
- Bibcode:
- 1991ITMTT..39..209I
- Keywords:
-
- Gallium Arsenides;
- Integrated Circuits;
- Microwave Amplifiers;
- Microwave Circuits;
- Mixing Circuits;
- Ultrahigh Frequencies;
- Field Effect Transistors;
- Ion Implantation;
- Low Noise;
- Ohmic Dissipation;
- Self Alignment;
- Electronics and Electrical Engineering