Strained-insulator In(x)Al(1-x)As/n(+)-In(0.53)Ga(0.47)As heterostructure field-effect transistors
Abstract
In an effort to enhance the conduction band discontinuity between channel and insulator, heterostructure field-effect transistors (HFETs) were fabricated with InAs mole fractions in the In(x)Al(1-x)As gate insulator of x = 0.52 (lattice matching), 0.48, 0.40, and 0.30. Decreasing the InAs mole fraction in the insulator results in reduced forward- and reverse-bias gate currents, increased reverse gate breakdown voltage, and reduced real-space transfer of hot electrons from channel to gate. Down to x = 0.40, these improvements trade off with a slightly reduced transconductance, but the gain in gate bias swing results in an increase in maximum current drivability. From x = 0.40 to x = 0.30, there is a drastic decrease in transconductance, coincident with a high density of MISFIT dislocations.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- September 1991
- DOI:
- 10.1109/16.83719
- Bibcode:
- 1991ITED...38.1986B
- Keywords:
-
- Aluminum Arsenides;
- Electrical Properties;
- Field Effect Transistors;
- Heterojunction Devices;
- Indium Gallium Arsenides;
- Insulators;
- Indium Arsenides;
- Molecular Beam Epitaxy;
- Transconductance;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering