10-micron GaAs/AlGaAs multiquantum well scanned array infrared imaging camera
Abstract
A long-wavelength infrared imaging camera that uses a GaAs/Al(x)Ga(1-x)As quantum-well infrared photodetector (QWIP) array is demonstrated. Excellent noise equivalent temperature difference sensitivity (NE Delta T less than 0.1 C) has been achieved. The long-wavelength cutoff for the QWIP used in this camera is at lambda(c) = 10.7 micron with the peak response being at lambda p = 9.8 micron. A peak detectivity of 2 x 10 to the 10th cm-sq rt Hz/W has been achieved at 77 K as well as an excellent pixel-to-pixel uniformity of 2 percent. Since GaAs has a more mature growth and processing technology as well as higher uniformity than HgCdTe, it shows great promise for the fabrication of large two-dimensional arrays.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- May 1991
- DOI:
- 10.1109/16.78387
- Bibcode:
- 1991ITED...38.1118B
- Keywords:
-
- Aluminum Gallium Arsenides;
- Infrared Detectors;
- Infrared Imagery;
- Infrared Photography;
- Photometers;
- Quantum Wells;
- Arrays;
- Gallium Arsenides;
- Instrumentation and Photography