Enhancement of electric field-induced refractive-index variation in a (GaInAsP)(InAs)/InP asymmetric multiple-quantum-film (MQF) structure
Abstract
The authors report the field-induced refractive-index variation in (GaInAsP)-(InAs)/InP assymetric quantum-film structures. An enhancement of an electric field-induced refractive-index variation due to the quantum confined Stark effect was theoretically found in the GaInAsP-InAs/InP asymmetric quantum-film structure, especially in a low electric-field regime. Almost two times higher sensitivity was experimentally confirmed in a 40-period GaInAsP (8 nm)-InAs (0.3-0.6 nm)/InP (8 nm) asymmetric multiple quantum-film (MQF) structure in comparison with a symmetric one without an InAs layer at an applied electric field less than 6 V/micron.
- Publication:
-
IEEE Photonics Technology Letters
- Pub Date:
- December 1991
- DOI:
- 10.1109/68.118018
- Bibcode:
- 1991IPTL....3.1110S
- Keywords:
-
- Electric Fields;
- Indium Gallium Arsenides;
- Indium Phosphides;
- Quantum Electronics;
- Refractivity;
- Stark Effect;
- Kramers-Kronig Formula;
- Organometallic Compounds;
- Quantum Wells;
- Semiconducting Films;
- Vapor Phase Epitaxy;
- Electronics and Electrical Engineering