100-GHz high-gain InP MMIC cascode amplifier
Abstract
A high-gain InP monolithic millimeter-wave integrated circuit (MMIC) cascode amplifier has been developed which has 8.0 dB of average gain from 75 to 100 GHz when biased for maximum bandwidth, and more than 12 dB of gain at 80 GHz at the maximum-gain bias point, representing the highest gains reported to date, obtained from MMICs at W band (75-100 GHz). Lattice-matched InGaAs-InAlAs high-electron-mobility-transistors (HEMTs) with 0.1-microns gates were the active devices. A coplanar waveguide (CPW) was the transmission medium for this MMIC with an overall chip dimension of 600 x 500 microns.
- Publication:
-
IEEE Journal of Solid-State Circuits
- Pub Date:
- October 1991
- DOI:
- Bibcode:
- 1991IJSSC..26.1370M
- Keywords:
-
- High Electron Mobility Transistors;
- Indium Gallium Arsenides;
- Indium Phosphides;
- Integrated Circuits;
- Microwave Amplifiers;
- Microwave Circuits;
- Equivalent Circuits;
- Millimeter Waves;
- Optical Waveguides;
- Electronics and Electrical Engineering